1/8 TK12 www.dynexsemi.com features high surge capability applications high power drives high voltage power supplies dc motor control welding battery chargers voltage ratings ordering information when ordering, select the required part number shown in the voltage ratings selection table, then:- add k to type number for 1/2" 20 unf thread, e.g. TK12 18k . or add m to type number for m12 thread, e.g. TK12 14m . note: please use the complete part number when ordering and quote this number in any future correspondance relating to your order. key parameters v drm 2000v i t(av) 75a i tsm 1400a dvdt* 200v/ s di/dt 500a/ s *higher dv/dt selections available TK12 phase control thyristor advance information replaces january 2000 version, ds4252-4.0 ds4252-5.0 july 2001 TK12 20 m or k TK12 18 m or k TK12 16 m or k TK12 14 m or k conditions t vj = 0? to 125?c, i drm = i rrm = 100ma, v drm , v rrm t p = 10ms, v dsm & v rsm = v drm & v rrm + 100v respectively lower voltage grades available. type number repetitive peak voltages v drm v rrm v 2000 1800 1600 1400 fig. 1 package outline outline type code: to94. see package details for further information.
2/8 www.dynexsemi.com TK12 surge ratings conditions 10ms half sine; t case = 125 o c v r = 50% v rrm - 1/4 sine 10ms half sine; t case = 125 o c v r = 0 max. units symbol parameter i tsm surge (non-repetitive) on-state current i 2 ti 2 t for fusing i tsm surge (non-repetitive) on-state current i 2 t i 2 t for fusing 9.8 x 10 3 a 2 s 1.4 ka 6.2 x 10 3 a 2 s 1.12 ka thermal and mechanical data conditions min. max. units symbol parameter - 0.24 o c/w thermal resistance - junction to case r th(j-c) mounting torque 15.0nm with mounting compound 0.08 - o c/w thermal resistance - case to heatsink r th(c-h) 125 o c t vj virtual junction temperature t stg storage temperature range reverse (blocking) - mounting torque 12.0 15.0 nm ?0 150 o c - on-state (conducting) - 125 o c dc t case = 80?c unless stated otherwise. symbol parameter conditions units max. i t(av) mean on-state current i t(rms) rms value i t continuous (direct) on-state current half wave resistive load 75 a - 120 a - 100 a current ratings t case = 60?c unless stated otherwise. symbol parameter conditions units max. i t(av) mean on-state current i t(rms) rms value i t continuous (direct) on-state current half wave resistive load 104 a - 163 a - 139 a
3/8 TK12 www.dynexsemi.com dynamic characteristics v tm parameter symbol conditions maximum on-state voltage at 150a peak, t case = 25 o c i rrm /i drm peak reverse and off-state current at v rrm /v drm , t case = 125 o c gate source 20v, 20 ? t r 0.5 s, t j = 125?c dv/dt maximum linear rate of rise of off-state voltage to 60% v drm t j = 125 o c, gate open circuit min. max. units - 2.0 v -10ma - 200 v/ s repetitive 50hz - 500 a/ s non-repetitive - 800 a/ s rate of rise of on-state current di/dt v t(to) threshold voltage at t vj = 125 o c r t on-state slope resistance at t vj = 125 o c t gd delay time i l latching current t j = 25 o c, v d = 12v i h holding current t j = 25 o c, v d = 12v, i tm = 1a 1.4 -v - 4.0 m ? - 1.5 s v d = 300v, i g = 1a, i t = 50a, di/dt = 50a/ s, di g /dt = 1a/ s, t j = 25 o c --ma -50ma gate trigger characteristics and ratings v drm = 12v, t case = 25 o c, r l = 6 ? conditions parameter symbol v gt gate trigger voltage v drm = 12v, t case = 25 o c, r l = 6 ? i gt gate trigger current v gd gate non-trigger voltage at v drm t case = 125 o c, r l = 12 ? v fgm peak forward gate voltage anode positive with respect to cathode v fgn peak forward gate voltage anode negative with respect to cathode v rgm peak reverse gate voltage i fgm peak forward gate current anode positive with respect to cathode p gm peak gate power - p g(av) mean gate power - 3.0 v - 125 ma - 0.2 v - 3.0 v - 0.25 v -5v -4a -16w -3w typ. max. units
4/8 www.dynexsemi.com TK12 curves 0 4.0 8.0 12.0 instantaneous on-state voltage v t - (v) 0 500 1000 1500 2000 instantaneous on-state current, i t - (a) measured under pulse conditions t j = 125 ? c sinusoidal current waveform rectangular current waveform fig.3 maximum on-state power dissipation for sinusoidal current waveform fig.2 maximum (limit) on-state characteristics fig.4 maximum allowable case temperature for sinusoidal current waveform
5/8 TK12 www.dynexsemi.com fig.5 maximum on-state power dissipation for rectangular current waveform fig.6 maximum allowable case temperature for rectangular current waveform fig.7 gate trigger characteristics fig.8 transient thermal impedance - junction to case
6/8 www.dynexsemi.com TK12 fig.9 multiplying factor for non-repetive sub-cycle surge on- state current and i 2 t rating fig.10 multiplying factor for non-repetive surge on-state current
7/8 TK12 www.dynexsemi.com package details for further package information, please contact your nearest customer service centre. all dimensions in mm, unless stated other wise. do not scale. 160 10 8 min 8 min 8.4 0.3 210 10 4 15 max 30 max hex. 27af m = m12 k = 1/2" 20 unf k = 20.6 0.6 m = 18.0 0.5 nominal weight: 120g mounting torque: 15nm 10% gate lead colour: white cathode lead colour: red package outine type code: to94
8/8 www.dynexsemi.com TK12 power assembly capability the power assembly group was set up to provide a support service for those customers requiring more than the basic semiconducto r, and has developed a flexible range of heatsink and clamping systems in line with advances in device voltages and current capabi lity of our semiconductors. we offer an extensive range of air and liquid cooled assemblies covering the full range of circuit designs in general use today . the assembly group continues to offer high quality engineering support dedicated to designing new units to satisfy the growing need s of our customers. using the latest cad methods our team of design and applications engineers aim to provide the power assembly complete solution (pacs). device clamps disc devices require the correct clamping force to ensure their safe operation. the pacs range includes a varied selection of pre-loaded clamps to suit all of our manufactured devices. types available include cube clamps for single side cooling of t 23mm and e 30mm discs, and bar clamps right up to 83kn for our z 100mm thyristors and diodes. clamps are available for single or double side cooling, with high insulation versions for high voltage assemblies. please refer to our application note on device clamping, an4839 heatsinks the power assembly group has its own proprietary range of extruded aluminium heatsinks. they have been designed to optimise th e performance of dynex semiconductors. data with respect to air natural, forced air and liquid cooling (with flow rates) is avai lable on request. for further information on device clamps, heatsinks and assemblies, please contact your nearest sales representative or custome r service office. customer service centres mainland europe tel: +33 (0)1 58 04 91 00. fax: +33 (0)1 46 38 51 33 north america tel: (613) 723-7035. fax: (613) 723-1518. uk, scandinavia & rest of world tel: +44 (0)1522 500500. fax: +44 (0)1522 500020 sales offices mainland europe tel: +33 (0)1 58 04 91 00. fax: +33 (0)1 46 38 51 33 north america tel: (613) 723-7035. fax: (613) 723-1518. toll free: 1.888.33.dynex (39639) / tel: (949) 733-3005. fax: (949) 733-2986. uk, scandinavia & rest of world tel: +44 (0)1522 500500. fax: +44 (0)1522 500020 these offices are supported by representatives and distributors in many countries world-wide. ? dynex semiconductor 2001 publication no. ds4252-5 issue no. 5.0 july 2001 technical documentation not for resale. printed in united kingdom headquarters operations dynex semiconductor ltd doddington road, lincoln. lincolnshire. ln6 3lf. united kingdom. tel: 00-44-(0)1522-500500 fax: 00-44-(0)1522-500550 dynex power inc. 99 bank street, suite 410, ottawa, ontario, canada, k1p 6b9 tel: 613.723.7035 fax: 613.723.1518 toll free: 1.888.33.dynex (39639) this publication is issued to provide information only which (unless agreed by the company in writing) may not be used, applied or reproduced for any purpose nor form part of any order or contract nor to be regarded as a representation relating to the products or services concerned. no warranty or guarantee express or implied is made regarding the capability, performance or suitability of any product or service. the company reserves the right to alter without prior notice the specification, design or price of any product or service. information concerning p ossible methods of use is provided as a guide only and does not constitute any guarantee that such methods of use will be satisfactory in a specific piece of equipment. it is the user's responsibility to fully determine the p erformance and suitability of any equipment using such information and to ensure that any publication or data used is up to date and has not been superseded. these products are not suitable for use in any medical products whose failure to perform may result in significant injury or death to the user. all products and materials are sold and services provided subject to the company's conditions of sale, w hich are available on request. all brand names and product names used in this publication are trademarks, registered trademarks or trade names of their respec tive owners. http://www.dynexsemi.com e-mail: power_solutions@dynexsemi.com datasheet annotations: dynex semiconductor annotate datasheets in the top right hard corner of the front page, to indicate product status. the annota tions are as follows:- target information: this is the most tentative form of information and represents a very preliminary specification. no actual design work on the product has been started. preliminary information: the product is in design and development. the datasheet represents the product as it is understood but details may change. advance information: the product design is complete and final characterisation for volume production is well in hand. no annotation: the product parameters are fixed and the product is available to datasheet specification.
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